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| Mini TOPLED(R) RG LS M770, LO M770, LY M770 LG M770, LP M770 Besondere Merkmale q q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839 VPL06926 Features q q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839 Semiconductor Group 1 11.96 LS M770, LO M770, LY M770 LG M770, LP M770 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA I V (mcd) 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 1.0 ... 8.0 1.6 ... 3.2 2.5 ... 5.0 1.6 ... 12.5 Luminous Flux IF = 10 mA V (mlm) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 8 (typ.) 12 (typ.) - Ordering Code LS M770-HK LS M770-J LS M770-K LS M770-JM LO M770-HK LO M770-J LO M770-K LO M770-JM LY M770-HK LY M770-J LY M770-K LY M770-JM LG M770-HK LG M770-J LG M770-K LG M770-JM LP M770-FJ LP M770-G LP M770-H LP M770-GK super-red Q62703-Q3326 Q62703-Q3327 Q62703-Q3328 Q62703-Q3329 Q62703-Q3330 Q62703-Q3331 Q62703-Q3332 Q62703-Q3333 Q62703-Q3334 Q62703-Q3336 Q62703-Q3335 Q62703-Q3337 Q62703-Q3338 Q62703-Q3339 Q62703-Q3340 Q62703-Q3341 Q62703-Q3342 Q62703-Q3343 Q62703-Q3344 Q62703-Q3345 orange colorless clear yellow colorless clear green colorless clear pure green colorless clear Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Semiconductor Group 2 LS M770, LO M770, LY M770 LG M770, LP M770 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot Rth JA 5 100 530 V mW K/W Semiconductor Group 3 LS M770, LO M770, LY M770 LG M770, LP M770 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit peak dom 628 605 590 570 560 nm 45 40 45 25 22 nm 2 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 120 2.0 2.6 Grad deg. V V VF VF IR IR C0 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group 4 LS M770, LO M770, LY M770 LG M770, LP M770 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS M770, LO M770, LY M770 LG M770, LP M770 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Semiconductor Group 6 LS M770, LO M770, LY M770 LG M770, LP M770 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 7 LS M770, LO M770, LY M770 LG M770, LP M770 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 8 GPL06926 |
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